Etch-pits and Dislocations

Computer program TRACK_TEST for calculating parameters and plotting profiles for etch pits in nuclear track materials

A computer program called TRACK_TEST for calculating parameters (lengths of the major and minor axes) and plotting profiles in nuclear track materials resulted from light-ion irradiation and subsequent chemical etching is described. The programming steps are outlined, including calculations of alpha-particle ranges, determination of the distance along the particle trajectory penetrated by the c...

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

Growth and dislocation studies of β-HMX

BACKGROUND The defect structure of organic materials is important as it plays a major role in their crystal growth properties. It also can play a subcritical role in "hot-spot" detonation processes of energetics and one such energetic is cyclotetramethylene-tetranitramine, in the commonly used beta form (β-HMX). RESULTS The as-grown crystals grown by evaporation from acetone show prismatic, t...

Fabrication of Low Dislocation Density, Single-Crystalline Diamond via Two-Step Epitaxial Lateral Overgrowth

Continuous diamond films with low dislocation density were obtained by two-step epitaxial lateral overgrowth (ELO). Grooves were fabricated by inductively coupled plasma etching. Mo/Pd stripes sputtered in the grooves were used to inhibit the propagation of dislocations originating from the diamond substrate. Coalescent diamond films were achieved by ELO via microwave plasma-enhanced chemical v...

Chlorination-methylation of the hydrogen-terminated silicon(111) surface can induce a stacking fault in the presence of etch pits.

Recently, we reported STM images of the methylated Si(111) surface [prepared through chlorination-alkylation of the Si(111)-H surface] taken at 4.7 K, indicating that the torsion angle of the methyl group with respect to the subsurface silicon layer is phi = 23 +/- 3 degrees . Repulsions between H atoms in adjacent methyl groups are minimized at 30 degrees , while repulsions between H atoms and...